Measurement Of Electrical Parameters Of The LED Lighting Device

LED light-emitting device electrical parameters:
1.Forward voltage VF: Forward current through the light-emitting diodes for determining the value generated between the poles of the voltage drop.

2.The reverse voltage VR: reverse current measured through the light-emitting diode device for determining when the value generated between the poles of the voltage drop.

3. Reverse current IR: add reverse voltage at both ends of the light-emitting diode when the determined value of flow through the light-emitting diode current.

LED volt-ampere characteristics:
1. LED IV Characterization of the main parameters of the LED chip PN junction preparing performance. IV characteristics of LED nonlinear, rectifying nature: one-way conductivity, plus a positive bias to the performance of low contact resistance, contrary to the high contact resistance.

2.A positive cutoff: (Figure OA or OA ‘section) a point for V0 voltage is turned on, when V <VA applied electric field has not been overcome many carrier diffusion barrier electric field resistance; the turn-on voltage for different LED its value and GaAs as 1V, red GaAsP 1.2V, GaP for 1.8V to 2.5V for GaN. Forward workspace: Current IF applied voltage exponentially, IS is the reverse saturation current. V> 0, V> VF’s forward IF with VF index rose.

3.Reverse cutoff region: V <0 PN junction plus anti-bias voltage, V =-VR, GaN reverse leakage current IR (V =-5V) to 10uA.

4. Reverse breakdown District V <-VR, VR called reverse voltage; the VR voltage corresponding to the reverse leakage current IR. When the reverse bias has been increased so that V <-VR, a sudden increase in IR breakdown phenomenon. Since the different types of compound materials, various LED reverse breakdown voltage VR is also different.